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View 2n3868 detailed specification:

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON POWER SWITCHING TRANSISTOR 2N3868 TO-39 Metal Can Package Designed for High Speed, Medium Current Switching and High Frequency Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 60 V VCBO Collector Base Voltage 60 V VEBO Emitter Base Voltage 4.0 V IC Collector Current - Continuous 3.0 A Peak 10 A IB Base Current 0.5 A Power Dissipation at Tc=25 C PD 6.0 W Derate Above 25 C 34.3 mW/ C Power Dissipation at Ta=25 C PD 1.0 W Derate Above 25 C 5.71 mW/ C Operating And Storage Junction Tj, Tstg - 65 to +200 C Temperature Range THERMAL CHARACTERISTICS Rth (j-c) Junction to Case 29 C/W Rth (j-a) Junction to Ambient in free air 175 C/W ELECTRICAL CHARACTERISTICS (Tc=25 C unless specif... See More ⇒

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