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View cef14p20 cep14p20 ceb14p20 detailed specification:

CEP14P20/CEB14P20 CEF14P20 PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP14P20 -200V 0.36 -13.5A -10V CEB14P20 -200V 0.36 -13.5A -10V CEF14P20 -200V 0.36 -13.5A d -10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK) TO-220 TO-220F ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Limit Parameter Symbol Units TO-220/263 TO-220F Drain-Source Voltage VDS -200 V Gate-Source Voltage VGS V 30 Drain Current-Continuous @ TC = 25 C -13.5 -13.5 d A ID @ TC = 100 C -8.5 -8.5 d A Drain Current-Pulsed a IDM e -54 -54 d A Maximum Power Dissipation @ TC = 25 C 139 42 W PD - Derate above 25 C 1.11 0.33 W/ C 273 Single Pulsed Avalanche Energy h EAS mJ IA... See More ⇒

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