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CEM2407 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -5.3A, RDS(ON) = 45m @VGS = -4.5V. RDS(ON) = 65m @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D1 D1 D2 D2 8 7 6 5 Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS 12 V Drain Current-Continuous ID -5.3 A Drain Current-Pulsed a IDM -21 A Maximum Power Dissipation PD 2.0 W Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Ambient b R JA 62.5 C/W Rev 4. 2011.July Details are subject to change without notice . http //www.cetsemi.com 1 CEM2407 P-C... See More ⇒

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