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CEN2301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -2.7A, RDS(ON) = 110m @VGS = -4.5V. RDS(ON) = 160m @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead-free plating ; RoHS compliant. SOT-23-T package. G D S G S SOT-23-T ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS 8 V Drain Current-Continuous ID -2.7 A Drain Current-Pulsed a IDM -10.8 A Maximum Power Dissipation PD 1.25 W Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Ambient b R JA 100 C/W Rev 1. 2012.July. Details are subject to change without notice . http //www.cetsemi.com 1 CEN2301 Electrical Characteristics TA = 25 C unless otherwi... See More ⇒

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