View cep01n65 ceb01n65 cef01n65 detailed specification:
CEP01N65/CEB01N65 CEF01N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP01N65 650V 10.5 1.3A 10V CEB01N65 650V 10.5 1.3A 10V CEF01N65 650V 10.5 1.3A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G CEB SERIES CEP SERIES CEF SERIES S TO-263(DD-PAK) TO-220 TO-220F ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Limit Parameter Symbol Units TO-220/263 TO-220F Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS V 30 Drain Current-Continuous ID 1.3 1.3 d A Drain Current-Pulsed a IDM e 5.2 5.2 d A Maximum Power Dissipation @ TC = 25 C 41 27 W PD - Derate above 25 C 0.33 0.22 W/ C Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Parameter Symbol Limit Units ... See More ⇒
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