View cep01n6g ceb01n6g cef01n6g detailed specification:
CEP01N6G/CEB01N6G CEF01N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP01N6G 600V 9.3 1A 10V CEB01N6G 600V 9.3 1A 10V CEF01N6G 600V 9.3 1A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G CEB SERIES CEP SERIES CEF SERIES S TO-263(DD-PAK) TO-220 TO-220F ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Limit Parameter Symbol Units TO-220/263 TO-220F Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS V 30 Drain Current-Continuous ID 1 1 d A Drain Current-Pulsed a IDM e 4 4 d A Maximum Power Dissipation @ TC = 25 C 41 27 W PD - Derate above 25 C 0.33 0.22 W/ C Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction... See More ⇒
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cep01n6g ceb01n6g cef01n6g.pdf Design, MOSFET, Power
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