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CEP02N65A/CEB02N65A CEF02N65A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP02N65A 650V 10.5 1.3A 10V CEB02N65A 650V 10.5 1.3A 10V CEF02N65A 650V 10.5 1.3A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G CEB SERIES CEP SERIES CEF SERIES S TO-263(DD-PAK) TO-220 TO-220F ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Limit Parameter Symbol Units TO-220/263 TO-220F Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS V 30 Drain Current-Continuous @ TC = 25 C 1.3 1.3 A ID @ TC = 100 C A 0.8 0.8 d Drain Current-Pulsed a IDM e 5.2 5.2 d A Maximum Power Dissipation @ TC = 25 C 41 27 W PD - Derate above 25 C 0.33 0.22 W/ C Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal C... See More ⇒

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