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View cep02n7g ceb02n7g cef02n7g detailed specification:

CEP02N7G/CEB02N7G CEF02N7G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N7G 700V 6.75 2A 10V CEB02N7G 700V 6.75 2A 10V CEF02N7G 700V 6.75 2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK) TO-220 TO-220F ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Limit Parameter Symbol Units TO-220/263 TO-220F Drain-Source Voltage VDS 700 V Gate-Source Voltage VGS V 30 Drain Current-Continuous @ TC = 25 C 2 2 d A ID @ TC = 100 C 1.3 1.3 d A Drain Current-Pulsed a IDM e 8 8 d A Maximum Power Dissipation @ TC = 25 C 60 33 W PD - Derate above 25 C 0.48 0.26 W/ C Single Pulsed Avalanche Energy h EAS 11.25 mJ IAS 1.5 A Single Pulsed Avalanche Current h Operatin... See More ⇒

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