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View cep02n9 ceb02n9 cef02n9 detailed specification:

CEP02N9/CEB02N9 CEF02N9 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N9 900V 6.8 2.6A 10V CEB02N9 900V 6.8 2.6A 10V CEF02N9 900V 6.8 2.6A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK) TO-220 TO-220F ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Limit Parameter Symbol Units TO-220/263 TO-220F Drain-Source Voltage VDS 900 V Gate-Source Voltage VGS V 30 Drain Current-Continuous @ TC = 25 C 2.6 2.6 d A ID @ TC = 100 C A 1.9 1.9 d Drain Current-Pulsed a IDM e 10.4 10.4 d A Maximum Power Dissipation @ TC = 25 C 125 47 W PD - Derate above 25 C 0.83 0.3 W/ C Operating and Store Temperature Range TJ,Tstg -55 to 175 C Thermal Characteristi... See More ⇒

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