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CEP12P10/CEB12P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -11A, RDS(ON) =315m @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS -100 V Gate-Source Voltage VGS 30 V Drain Current-Continuous ID -11 A Drain Current-Pulsed a IDM -44 A Maximum Power Dissipation @ TC = 25 C 75 W PD - Derate above 25 C 0.5 W/ C Operating and Store Temperature Range TJ,Tstg -55 to 175 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case R JC 2 C/W Thermal Resistance, Junction-to-Ambient R JA 62.5 C/W 2005.August http //www.cetsemi.com ... See More ⇒

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