All Transistors. Equivalents Search

View cep14n5 ceb14n5 cef14n5 detailed specification:

CEP14N5/CEB14N5 CEF14N5 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP14N5 500V 0.38 14A 10V CEB14N5 500V 0.38 14A 10V CEF14N5 500V 0.38 14A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK) TO-220 TO-220F ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Limit Parameter Symbol Units TO-220/263 TO-220F Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS V 30 Drain Current-Continuous @ TC = 25 C 14 d A 14 ID @ TC = 100 C 8.6 8.6 d A Drain Current-Pulsed a IDM e 56 56 d A Maximum Power Dissipation @ TC = 25 C 178 62 W PD - Derate above 25 C 1.4 0.5 W/ C Single Pulsed Avalanche Energy e EAS 504 mJ Single Pulsed Avalanche Current e IAS... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 cep14n5 ceb14n5 cef14n5.pdf Design, MOSFET, Power

 cep14n5 ceb14n5 cef14n5.pdf RoHS Compliant, Service, Triacs, Semiconductor

 cep14n5 ceb14n5 cef14n5.pdf Database, Innovation, IC, Electricity