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View ceu01n65a ced01n65a detailed specification:

CED01N65A/CEU01N65A N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.9A, RDS(ON) = 15 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS 30 V Drain Current-Continuous ID 0.9 A Drain Current-Pulsed a IDM 3.6 A Maximum Power Dissipation @ TC = 25 C 43 W PD - Derate above 25 C 0.35 W/ C Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case R JC 3.5 C/W Thermal Resistance, Junction-to-Ambient R JA 50 C/W Rev 1. 2010.Mar De... See More ⇒

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