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View ceu16n10 ced16n10 detailed specification:

CED16N10/CEU16N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 13.3A, RDS(ON) = 120m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V Drain Current-Continuous ID 13.3 A Drain Current-Pulsed a IDM 53 A Maximum Power Dissipation @ TC = 25 C 43 W PD - Derate above 25 C 0.34 W/ C Operating and Store Temperature Range TJ,Tstg -55 to 175 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case R JC 3.5 C/W Thermal Resistance, Junction-to-Ambient R JA 50 C/W Rev 1. 2010.Jan. D... See More ⇒

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