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Silicon N-Channel Power MOSFET R CS2N80 A3HY General Description VDSS 800 V CS2N80 A3HY, the silicon N-channel Enhanced ID 2.0 A PD (TC=25 ) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard.. Features Fast Switching Low Gate Charge (Typical Data 12nC) Low Reverse transfer capacitances(Typical 4.0pF) 100% Single Pulse avalanche energy Test Applications Power switch circuit of adaptor and charger. Absolute Tc= 25 unless otherwise specified Symbol Parameter Rating Units VDSS Drain-to-Source Voltage 800 V C... See More ⇒

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