All Transistors. Equivalents Search

View 2n5551 mmbt5551 detailed specification:

June 2009 2N5551 / MMBT5551 NPN General Purpose Amplifier Features This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Suffix -C means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) Suffix -Y means hFE 180 240 in 2N5551 (Test condition IC = 10mA, VCE = 5.0V) 2N5551 MMBT5551 3 2 TO-92 SOT-23 1 Marking 3S 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 160 V VCBO Collector-Base Voltage 180 V VEBO Emitter-Base Voltage 6.0 V IC Collector current - Continuous 600 mA TJ, Tstg Junction and Storage Temperature -55 to +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1. These ratings are based on ... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 2n5551 mmbt5551.pdf Design, MOSFET, Power

 2n5551 mmbt5551.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n5551 mmbt5551.pdf Database, Innovation, IC, Electricity