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2n7000bu2n7000bu

Advanced Small Signal MOSFET 2N7000BU/2N7000TA FEATURES BVDSS = 60 V n Fast Switching Times RDS(on) = 5.0 n Improved Inductive Ruggedness n Lower Input Capacitance ID = 200 mA n Extended Safe Operating Area n Improved High Temperature Reliability TO-92 1.Source 2. Gate 3. Drain Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 60 Continuous Drain Current (TC=25 ) 200 ID mA Continuous Drain Current (TC=100 ) 110 IDM Drain Current-Pulsed 1000 mA VGS Gate-to-Source Voltage 30 V Total Power Dissipation (TC=25 ) 400 mW PD Linear Derating Factor 3.2 mW/ Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range Maximum Lead Temp. for Soldering TL 300 Purposes, 1/8? from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. Units R JA Junction-to-Ambient -- 312.5... See More ⇒

 

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