View fca22n60n detailed specification:
July 2009 SupreMOS TM FCA22N60N tm N-Channel MOSFET 600V, 22A, 0.165 Features Description RDS(on) = 0.140 ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling BVDSS>650V @ TJ = 150oC process that differentiates it from preceding multi-epi based tech- nologies. By utilizing this advanced technology and precise pro- Ultra Low Gate Charge ( Typ. Qg = 45nC) cess control, SupreMOS provides world class Rsp, superior Low Effective Output Capacitance switching performance and ruggedness. This SupreMOS MOSFET fits the industry s AC-DC SMPS 100% Avalanche Tested requirements for PFC, server/telecom power, FPD TV power, RoHS Compliant ATX power, and industrial power applications. D D G TO-3PN G D S S MOSFET Maximum Ratings TC = 25oC unless ot... See More ⇒
Keywords - ALL TRANSISTORS SPECS
fca22n60n.pdf Design, MOSFET, Power
fca22n60n.pdf RoHS Compliant, Service, Triacs, Semiconductor
fca22n60n.pdf Database, Innovation, IC, Electricity
