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January 2004 FDD107AN06LA0 N-Channel PowerTrench MOSFET 60V, 10A, 107m Features Applications rDS(ON) = 92m (Typ.), VGS = 5V, ID = 10A Motor / Body Load Control Qg(tot) = 4.2nC (Typ.), VGS = 5V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC converters and Off-line UPS Qualified to AEC Q101 Distributed Power Architectures and VRMs Primary Switch for 12V and 24V systems Formerly developmental type 83524 DRAIN (FLANGE) D GATE G SOURCE TO-252AA S FDD SERIES MOSFET Maximum Ratings TC = 25 C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 60 V VGS Gate to Source Voltage 20 V Drain Current 10.9 A Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 25oC, VGS = 5V) 10 A I... See More ⇒

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