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August 2002 FDD10AN06A0 N-Channel PowerTrench MOSFET 60V, 50A, 10.5m Features Applications rDS(ON) = 9.4m (Typ.), VGS = 10V, ID = 50A Motor / Body Load Control Qg(tot) = 28nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low Qrr Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC converters and Off-line UPS Qualified to AEC Q101 Distributed Power Architectures and VRMs Primary Switch for 12V and 24V systems Formerly developmental type 82560 DRAIN (FLANGE) D GATE G SOURCE S TO-252AA FDD SERIES MOSFET Maximum Ratings TC = 25 C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 60 V VGS Gate to Source Voltage 20 V Drain Current 50 A Continuous (TC ... See More ⇒

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