All Transistors. Equivalents Search

View fdd6n20tf detailed specification:

May 2007 UniFETTM FDD6N20TM tm N-Channel MOSFET 200V, 4.5A, 0.8 Features Description RDS(on) = 0.6 ( Typ. )@ VGS = 10V, ID = 2.3A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 4.7nC ) stripe, DMOS technology. Low Crss ( Typ. 6.3pF ) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Fast switching performance, and withstand high energy pulse in the avalanche 100% avalanche tested and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor Improved dv/dt capability correction. RoHS compliant D D G G S I-PAK G S D D-PAK FDU Series FDD Series S MOSFET Maximum Ratings TC = 25oC unless otherwise not... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 fdd6n20tf.pdf Design, MOSFET, Power

 fdd6n20tf.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fdd6n20tf.pdf Database, Innovation, IC, Electricity