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April 2007 UniFETTM FDD7N20 / FDU7N20 tm N-Channel MOSFET 200V, 5A, 0.69 Features Description RDS(on) = 0.58 ( Typ. ) @ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge( Typ. 5nC ) stripe, DMOS technology. Low Crss ( Typ. 5pF ) This advanced technology has been especically tailored to Fast switching minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche 100% avalanche tested and commutation mode. These devices are well suited for high Improved dv/dt capability efficient switched mode power supplies and active power factor RoHS compliant correction. D D G G I-PAK S FDU Series D-PAK G S D FDD Series S MOSFET Maximum Ratings TC = 25oC unless otherwise... See More ⇒

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