View fdd7n20tm detailed specification:
November 2013 FDD7N20TM N-Channel UniFETTM MOSFET 200 V, 5 A, 690 m Features Description UniFETTM MOSFET is Fairchild Semiconductor s high voltage RDS(on) = 580 m (Typ.) @ VGS = 10 V, ID = 2.5 A MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 5 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche en- Low Crss (Typ. 5 pF) ergy strength. This device family is suitable for switching power 100% Avalanche Tested converter applications such as power factor correction (PFC), RoHS Compliant flat panel display (FPD) TV power, ATX and electronic lamp bal- lasts. Applications LCD/LED/PDP TV Consumer Appliances Lighting Uninterruptible Power AC-DC Power Supply D D G G S D-PAK S MOSFET Maximum Ratings TC = 25oC unless ot... See More ⇒
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fdd7n20tm.pdf Design, MOSFET, Power
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