View fqb12p10tm detailed specification:
TM QFET FQB12P10 / FQI12P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -11.5A, -100V, RDS(on) = 0.29 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well 175 C maximum junction temperature rating suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. D D G G S D2-PAK I2-PAK G D S FQB Series FQI Series S Absolut... See More ⇒
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