View fqd12n20ltf fqd12n20ltm fqd12n20l fqu12n20l detailed specification:
January 2009 QFET FQD12N20L / FQU12N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.28 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well Low level gate drive requirement allowing direct suited for high efficiency switching DC/DC converters, opration from logic drivers switch mode power supply, motor control. RoHS Compliant D D G D-PAK I-PAK G S ... See More ⇒
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fqd12n20ltf fqd12n20ltm fqd12n20l fqu12n20l.pdf Design, MOSFET, Power
fqd12n20ltf fqd12n20ltm fqd12n20l fqu12n20l.pdf RoHS Compliant, Service, Triacs, Semiconductor
fqd12n20ltf fqd12n20ltm fqd12n20l fqu12n20l.pdf Database, Innovation, IC, Electricity
