All Transistors. Equivalents Search

View fqd12n20ltm f085 detailed specification:

June 2010 FQD12N20LTM_F085 200V Logic Level N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.28 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well Low level gate drive requirement allowing direct suited for high efficiency switching DC/DC converters, opration from logic drivers switch mode power supply, motor control. Qualified to AEC Q101 RoHS Compliant D D G ... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 fqd12n20ltm f085.pdf Design, MOSFET, Power

 fqd12n20ltm f085.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fqd12n20ltm f085.pdf Database, Innovation, IC, Electricity