View fqd12n20tf fqd12n20tm fqd12n20 fqu12n20 fqu12n20tu detailed specification:
January 2009 QFET FQD12N20 / FQU12N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.28 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 18 nC) planar stripe, DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well RoHS Compliant suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterrupted power supply, motor control. D D G D-PAK I-PAK G S FQD Series G FQU Series D S S A... See More ⇒
Keywords - ALL TRANSISTORS SPECS
fqd12n20tf fqd12n20tm fqd12n20 fqu12n20 fqu12n20tu.pdf Design, MOSFET, Power
fqd12n20tf fqd12n20tm fqd12n20 fqu12n20 fqu12n20tu.pdf RoHS Compliant, Service, Triacs, Semiconductor
fqd12n20tf fqd12n20tm fqd12n20 fqu12n20 fqu12n20tu.pdf Database, Innovation, IC, Electricity
