View fqd6n25tf fqd6n25tm fqd6n25 fqu6n25 detailed specification:
October 2008 QFET FQD6N25 / FQU6N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 4.4A, 250V, RDS(on) = 1.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.6 nC) planar stripe, DMOS technology. Low Crss ( typical 7.5 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well RoHS Compliant suited for high efficiency switching DC/DC converters, switch mode power supply. D D G D-PAK I-PAK G S FQD Series G FQU Series D S S AbsoIute Maximum Ratings T = 25 C unless otherwise noted Sy... See More ⇒
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fqd6n25tf fqd6n25tm fqd6n25 fqu6n25.pdf Design, MOSFET, Power
fqd6n25tf fqd6n25tm fqd6n25 fqu6n25.pdf RoHS Compliant, Service, Triacs, Semiconductor
fqd6n25tf fqd6n25tm fqd6n25 fqu6n25.pdf Database, Innovation, IC, Electricity
