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October 2008 QFET FQD6N40C / FQU6N40C 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 400V, RDS(on) = 1.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 16nC) planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well RoHS Compliant suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology. D D ... See More ⇒

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 fqd6n40ctf fqd6n40ctm fqd6n40c fqu6n40c fqu6n40ctu.pdf Design, MOSFET, Power

 fqd6n40ctf fqd6n40ctm fqd6n40c fqu6n40c fqu6n40ctu.pdf RoHS Compliant, Service, Triacs, Semiconductor

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