All Transistors. Equivalents Search

View fqd6n60ctm detailed specification:

QFET FQD6N60C 600V N-Channel MOSFET Features Description 4 A, 600 V, RDS(on) = 2.0 @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 16 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to Low Crss ( typical 7 pF) minimize on-state resistance, provide superior switching Fast switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high 100 % avalanche tested efficiency switched mode power supplies, active power factor Improved dv/dt capability correction, electronic lamp ballasts based on half bridge topology. D D ... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 fqd6n60ctm.pdf Design, MOSFET, Power

 fqd6n60ctm.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fqd6n60ctm.pdf Database, Innovation, IC, Electricity