All Transistors. Equivalents Search

View fqp12n60c detailed specification:

March 2014 FQP12N60C N-Channel QFET MOSFET 600 V, 12 A, 650 m Description Features These N-Channel enhancement mode power field effect 12 A, 600 V, RDS(on) = 650 m (Max.) @ VGS = 10 V, transistors are produced using Fairchild s proprietary, planar ID = 6 A stripe, DMOS technology. This advanced technology has Low Gate Charge (Typ. 48 nC) been especially tailored to minimize on-state resistance, Low Crss (Typ. 21 pF) provide superior switching performance, and withstand high 100% Avalanche Tested energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. D GD G S TO-220 S o Absolute Maximum Ratings TC = 25 C unless otherwise noted. Symbol Parameter FQP12N60C Unit VDSS Drai... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 fqp12n60c.pdf Design, MOSFET, Power

 fqp12n60c.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fqp12n60c.pdf Database, Innovation, IC, Electricity