View fqp44n10 detailed specification:
December 2000 TM QFET QFET QFET QFET FQP44N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 43.5A, 100V, RDS(on) = 0.039 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 48 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology is especially tailored to minimize Fast switching on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation modes. These devices are 175 C maximum junction temperature rating well suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control. D G GD TO-220 S FQP Series S Absolute Maximu... See More ⇒
Keywords - ALL TRANSISTORS SPECS
fqp44n10.pdf Design, MOSFET, Power
fqp44n10.pdf RoHS Compliant, Service, Triacs, Semiconductor
fqp44n10.pdf Database, Innovation, IC, Electricity
