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May 2001 TM QFET FQPF47P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -30A, -60V, RDS(on) = 0.026 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 84 nC) planar stripe, DMOS technology. Low Crss ( typical 320 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand a high energy pulse in the Improved dv/dt capability avalanche and commutation modes. These devices are 175 C maximum junction temperature rating well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products. S ... See More ⇒

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