View 2sk3272-01sj-01s-01l detailed specification:

2sk3272-01sj-01s-01l2sk3272-01sj-01s-01l

2SK3272-01L,S,SJ 200509 N-CHANNEL SILICON POWER MOSFET Trench Power MOSFET Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof See to P4 Applications Switching regulators DC-DC converters General purpose power amplifier Maximum ratings and characteristics Absolute maximum ratings (Tc=25 C unless otherwise specified) Item Symbol Rating Unit Remarks Equivalent circuit schematic Drain-source voltage VDS 60 V VDSX 30 V VGS=-20V Drain(D) Continuous drain current ID 80 A Pulsed drain current ID[puls] 320 A Gate-source peak voltage VGS +30/-20 Gate(G) V Maximum avalanche energy EAV 484.3 mJ *1 Maximum power dissipation PD 135 W Operating and storage Tch +150 C Source(S) temperature range Tstg -55 to +150 C *1 L=101 H, Vcc=24V Electrical characteristics (Tc =25 C unless... See More ⇒

 

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 2sk3272-01sj-01s-01l.pdf Design, MOSFET, Power

 2sk3272-01sj-01s-01l.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sk3272-01sj-01s-01l.pdf Database, Innovation, IC, Electricity