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View 12n60 12n60f detailed specification:

GOFORD 12N60/12N60F 600V N-Channel MOSFET GENERAL DESCRIPTION VDSS RDS(ON) ID This Power MOSFET is produced using advanced planar stripe DMOS 600V 0.65 12A technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features 12A, 600V, RDS(on) = 0.65 @VGS = 10 V Ordering Information Low gate charge ( typical 52nC) PACKAGE BRAND PART NUMBER Fast switching 100% avalanche tested TO-220/220F 0GFD 12N60/12N60F Improved dv/dt capability HTTP //www.gofordsemi.com TEL 0755-29 961262 FAX 0755-29961466 Page 1 GOFORD 12N60/12N60F Absolute Maximum Rating... See More ⇒

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