View 2301h detailed specification:
GOFORD 2301H DESCRIPTION D2 The 2301H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G2 voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S2 GENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) ID @ (Typ) @ -4.5V -10V (Typ) m m -2 -30V 105 65 A 2301H High Power and current handing capability Marking and pin Assignment Lead free product is acquired Surface Mount Package Application PWM applications Load switch SOT-23 Power management Absolute Maximum Ratings (TA=25 unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage -30 V VDS Gate-Source Voltage 12 V VGS Drain Current-Continuous -2 A I D Drain Current -Pulsed (Note 1) -10 A I DM Maximum Power Dissipation 1 W P ... See More ⇒
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2301h.pdf Design, MOSFET, Power
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