View gm2301 detailed specification:
Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM2301 SOT-23 (SOT-23 Field Effect Transistors) P-Channel Enhancement-Mode MOS FETs P-Channel Enhancement-Mode MOS FETs P-Channel Enhancement-Mode MOS FETs P-Channel Enhancement-Mode MOS FETs P MOS P MOS P MOS P MOS MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Max Unit Drain-Source Voltage BVDSS -20 V - Gate- Source Voltage VGS +10 V - Drain Current (continuous) ID -2.8 A - Drain Current (pulsed) IDM -10 A - Total Device Dissipatio... See More ⇒
Keywords - ALL TRANSISTORS SPECS
gm2301.pdf Design, MOSFET, Power
gm2301.pdf RoHS Compliant, Service, Triacs, Semiconductor
gm2301.pdf Database, Innovation, IC, Electricity
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet


