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View hgtp7n60 detailed specification:

HGTP7N60C3D, HGT1S7N60C3D, S E M I C O N D U C T O R HGT1S7N60C3DS 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1996 Features Packaging JEDEC TO-220AB 14A, 600V at TC = +25oC EMITTER COLLECTOR 600V Switching SOA Capability GATE Typical Fall Time - 140ns at TJ = +150oC Short Circuit Rating COLLECTOR (FLANGE) Low Conduction Loss Hyperfast Anti-Parallel Diode Description JEDEC TO-262AA The HGTP7N60C3D, HGT1S7N60C3D and HGT1S7N60C3DS EMITTER COLLECTOR are MOS gated high voltage switching devices combining the GATE COLLECTOR best features of MOSFETs and bipolar transistors. These (FLANGE) devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The IGBT used is devel... See More ⇒

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