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View 2sd1868 2sd1869 detailed specification:

2SD1868, 2SD1869 Silicon NPN Epitaxial Application Low frequency high voltage amplifier Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD1868, 2SD1869 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SA1868 2SA1869 Unit Collector to base voltage VCBO 160 200 V Collector to emitter voltage VCEO 160 200 V Emitter to base voltage VEBO 55V Collector current IC 100 100 mA Collector power dissipation PC 0.9 0.9 W Junction temperature Tj 150 150 C Storage temperature Tstg 55 to +150 55 to +150 C Electrical Characteristics (Ta = 25 C) Item Symbol Min Typ Max Unit Test conditions Collector to base 2SD1868 V(BR)CBO 160 V IC = 10 A, IE = 0 breakdown voltage 2SD1869 200 Collector to emitter 2SD1868 V(BR)CEO 160 V IC = 1 mA, RBE = breakdown voltage 2SD1869 200 Emitter to base breakdown V(BR)EBO 5 V IE = 10 A, ... See More ⇒

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