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View 2sj117 detailed specification:

2SJ117 Silicon P-Channel MOS FET ADE-208-1180 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features High speed switching Good frequency characteristics Wide area of safe operation Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators. Outline TO-220AB D 1 2 3 1. Gate 2. Drain G (Flange) 3. Source S 2SJ117 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 400 V Gate to source voltage VGSS 20 V Drain current ID 2 A Drain peak current ID(pulse) 4 A Body to drain diode reverse drain current IDR 2 A Channel dissipation Pch*1 40 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes 1. Value at TC = 25 C Electrical Characteristics (Ta = 25 C) Item Symbol Min Typ Max Unit Test conditions Drain to source... See More ⇒

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