View 2sj160 2sj161 2sj162 detailed specification:
2SJ160, 2SJ161, 2SJ162 Silicon P-Channel MOS FET ADE-208-1182 (Z) 1st. Edition Mar. 2001 Application Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 Features Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier 2SJ160, 2SJ161, 2SJ162 Outline TO-3P D 1 G 2 3 1. Gate 2. Source (Flange) S 3. Drain Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage 2SJ160 VDSX 120 V 2SJ161 140 2SJ162 160 Gate to source voltage VGSS 15 V Drain current ID 7 A Body to drain diode reverse drain current IDR 7 A Channel dissipation Pch*1 100 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +1... See More ⇒
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2sj160 2sj161 2sj162.pdf Design, MOSFET, Power
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