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View 2sj175 detailed specification:

2SJ175 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D 1 2 3 1. Gate G 2. Drain 3. Source S 2SJ175 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS 20 V Drain current ID 10 A Drain peak current ID(pulse)*1 40 A Body to drain diode reverse drain current IDR 10 A Channel dissipation Pch*2 25 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes 1. PW 10 s, duty cycle 1% 2. Value at TC = 25 C 2 2SJ175 Electrical Characteristics (Ta = 25 C) Item Symbol Min... See More ⇒

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