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View 2sj292 detailed specification:

2SJ292 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline TO-220AB 1 D 2 3 1. Gate G 2. Drain (Flange) 3. Source S 2SJ292 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS 20 V Drain current ID 30 A Drain peak current ID(pulse)*1 120 A Body to drain diode reverse drain current IDR 30 A Avalanche current IAP*3 30 A Avalanche energy EAR*3 77 mJ Channel dissipation Pch*2 75 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes 1. PW 10 s, duty cycle 1% 2. Value at TC = 25 C ... See More ⇒

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