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2SJ471 Silicon P Channel DV L MOS FET High Speed Power Switching ADE-208-540 1st. Edition Features Low on-resistance RDS(on) = 25 m typ. 4V gate drive devices. High speed switching Outline TO 220CFM D G 1 2 3 1. Gate 2. Drain S 3. Source 2SJ471 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS 20 V Drain current ID 30 A Drain peak current ID(pulse)Note1 120 A Body to drain diode reverse drain current IDR 30 A Channel dissipation Pch Note2 30 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25 C 2 2SJ471 Electrical Characteristics (Ta = 25 C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown V(BR)DSS 30 V ID = 10m... See More ⇒

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