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2SK3214 Silicon N Channel MOS FET High Speed Power Switching ADE-208-763(Z) Target Specification 1st. Edition December 1998 Features Low on-resistance RDS =130m typ. High speed switching 4V gate drive device can be driven from 5V source Outline TO 220AB D G 1. Gate 1 2. Drain(Flange) 2 3. Source 3 S 2SK3214 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 200 V Gate to source voltage VGSS 20 V Drain current ID 10 A Drain peak current ID(pulse)Note1 40 A Body-drain diode reverse drain current IDR 10 A Avalanche current IAP Note3 10 A Avalanche energy EAR Note3 6.6 mJ Channel dissipation Pch Note2 50 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Note 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25 C 3. Value at Tch = 25 C, Rg 50 El... See More ⇒

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