View h2n7002k detailed specification:
Spec. No. MOS200803 HI-SINCERITY Issued Date 2005.03.13 Revised Date 2010,03,04 MICROELECTRONICS CORP. Page No. 1/5 H2N7002K N-CHANNEL TRANSISTOR Description N-channel enhancement-mode MOS transistor. ESD protected Absolute Maximum Ratings Drain-Source Voltage ............................................................................................................................................ 60 V Drain-Gate Voltage (RGS=1M )............................................................................................................................. 60 V Gate-Source Voltage ........................................................................................................................................... 20 V Continuous Drain Current (TA=25 C)(1)........................................................................................... See More ⇒
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