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View 2n3583 detailed specification:

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3583 DESCRIPTION Contunuous Collector Current-IC= 1A Power Dissipation-PD=35W @TC= 25 Collector-Emitter Saturation Voltage- VCE(sat)= 5.0 V(Max)@ IC = 1A APPLICATIONS Designed for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, switching regu- lators, converters,deflection stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 175 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1.0 A ICM Collector Current-Peak 5.0 A IBB Base Current 1.0 A PC Collector Power Dissipation@TC=25 35 W TJ Junction Temperature 200 Storage Temperature -65 200 Tstg THERMAL CHARACTERISTICS ... See More ⇒

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