View 2n6106 2n6108 2n6110 detailed specification:
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6106 2N6108 2N6110 DESCRIPTION With TO-220 package With short pin APPLICATIONS Power amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N6106 -40 VCBO Collector-base voltage 2N6108 Open emitter -60 V 2N6110 -80 2N6106 -30 VCEO Collector-emitter voltage 2N6108 Open base -50 V 2N6110 -70 VEBO Emitter-base voltage Open collector -5 V IC Collector current -7 A ICM Collector current-peak -10 A IB Base current -3 A PT Total power dissipation TC=25 40 W Tj Junction temperature 150 Tstg Storage temperature -65 150 THERMAL CHARACTERISTICS SYMBOL PARAMETE... See More ⇒
Keywords - ALL TRANSISTORS SPECS
2n6106 2n6108 2n6110.pdf Design, MOSFET, Power
2n6106 2n6108 2n6110.pdf RoHS Compliant, Service, Triacs, Semiconductor
2n6106 2n6108 2n6110.pdf Database, Innovation, IC, Electricity
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet
