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View 2sa1822 detailed specification:

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1822 DESCRIPTION High Collector-Emitter Breakdown Voltage Excellent switching time 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage switching applications. High speed DC-DC converter application ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -400 V CBO V Collector-Emitter Voltage -400 V CEO V Emitter-Base Voltage -7 V EBO I Collector Current-Continuous -1 A C I Base Current-Continuous -0.5 A B Collector Power Dissipation 2 @T =25 a P W C Collector Power Dissipation 25 @T =25 C T Junction Temperature 150 J T Storage Temperature -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark INCHANGE Semiconductor isc Si... See More ⇒

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