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View 2sc1170 detailed specification:

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1170 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1200 V CBO V Collector-Emitter Voltage 500 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current-Continuous 3.5 A C Collector Power Dissipation P 50 W C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1170 ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified C SYMBOL PARAMETER CONDITIONS MIN TYP. MAX... See More ⇒

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