View 2sc3257 detailed specification:
isc Silicon NPN Power Transistor 2SC3257 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 250 V CBO V Collector-Emitter Voltage 200 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 10 A C I Collector Current-Peak 15 A CM I Base Current-Continuous 2 A B Collector Power Dissipation 1.5 @ T =25 a P W C Collector Power Dissipation 40 @ T =25 C T Junction Temperature 150 J Storage Temperature Range -55 150 T stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademar... See More ⇒
Keywords - ALL TRANSISTORS SPECS
2sc3257.pdf Design, MOSFET, Power
2sc3257.pdf RoHS Compliant, Service, Triacs, Semiconductor
2sc3257.pdf Database, Innovation, IC, Electricity
